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and dramatically shortens development cycles for engineers designing compact
Suitable for both single-phase and three-phase controlled rectifier topologies
Sourcing IGBT modules like the MG25J6ES40 can be challenging due to long manufacturer lead times
Sourcing high-current IGBT modules like the 6MBP300KA060 can be challenging
1200V VCES rating delivers adequate voltage margin for 400–690VAC three-phase industrial applications
BSM100GB120DN2-E3256-INFINEON Palmetto Inventory and dramatically shortens development cyclesThe BSM100GB120DN2 E3256 is a high performance dual IGBT module manufactured by Infineon Technologies, offering a 100A collector current rating and 1200V blocking voltage. Utilizing Infineon's advanced trench gate IGBT technology within the DN2 package configuration, this module provides low saturation voltage, fast switching characteristics, and integrated freewheeling diodes making it an excellent choice for engineers designing robust power
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