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Utilizing Infineon's advanced trench-gate IGBT technology within the DN2 package configuration
Its robust construction ensures stable operation across a wide temperature range
Integrated gate structure optimized for reliable turn-on and turn-off switching performance across rated operating conditions
1200V collector-emitter voltage (VCES) suitable for 690V AC bus applications with full derating margin
Fuji L-series technology optimized for medium-frequency switching applications
2MBI150PC-140-02-FUJI Quantity Percent Discount Utilizing Infineon's advanced trench-gate IGBTOur listed stock is in Palmetto, Florida. We have additional inventory in international warehouses. All listings inventory has a quality guarantee. Additionally, we have access to more than 400 manufacturers products, many of which are on global shortage. Have questions? Feel free to email us at websales@igbt. us. com or call us directly at +1. 239. 206. 1240.
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